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Institute of Semiconductor Optics and Functional Interfaces

Contact data

Address: Allmandring 3, 70569 Stuttgart

Telephone: (0711) 685-63871

Fax: (0711) 685-63866

E-Mail: sekr@ihfg.uni-stuttgart.de


Administration

Prof. Dr. Peter Michler


Contact persons

Prof. Dr. Peter Michler (Semiconductor optics and quantum optics)

Prof. Dr. W. Bolse (Material research with ion beams)

Dr. M. Jetter (Semiconductor epitaxy, optoelectronics)


Fields of activity

Semiconductor optics and quantum optics:

Nonclassical light sources based on semiconductor nanostructures:
Development of single photon sources, generation and verification of entangled photons, threshold-less laser, basic principles of light-matter interaction Resonatorquantum electrodynamics with quantum dots:
Modification of spontaneous emission (Purcell-effect), strong coupling of emitter and resonator field (Rabi-splitting and Rabi-oscillations), coherent dynamics, manipulation and control of electronic excitations in semiconductor nanostructures: coupled quantum dot systems, coherent control of electronic states, quantum gates

Semiconductor epitaxy:

Metal-organic vapor-phase epitaxy (MOVPE) of GaAs/AlGaAs-, GaInP/AlGaInP- and GaN/AlGaInN-heterostructures, epitaxy of ultra-thin layers (quantum wells), quantum dots and device structures (laser, VCSEL, saturable absorber), development of semiconductor laser (edge- and surface-emitting laser, semiconductor disk laser, VECSEL)

Optoelectronics:

Physical properties of optoelectronic devices and semiconductor laser (especially quantum well and quantum dot laser), dynamic properties of low-dimensional semiconductors, radiative and non-radiative recombination processes, structural defects in semiconductor structures, development of light emitting structures in the red (laser, LED, VCSEL quantum dots) and blue-green (InGaN quantum wells and dots) spectral range

Materials research with nuclear probes and ion beams:

Structure and pattern formation in thin films and their interfaces under swift heavy ion irradiation, nanostructures by single ion impacts, ion beam guided selforganisation in thin films, ion implantation at low energies, stability of nanostructures against ion implantation, single ion implantation into quantum structures


Qualifications

Special experiences in micro-photoluminescence spectroscopy, time-resolved spectroscopy and photon-statistic measurements of semiconductor nanostructures and semiconductor laser, semiconductor epitaxy, optoelectronic devices, semiconductor and nano technology and ion implantation and irradiation


Facilities

Laboratories for temperature dependent micro-photoluminescence (PL) spectroscopy, time-resolved PL-spectroscopy, photon statistic measurements, epitaxy set-up for MOVPE, X-ray diffraction, Hall measurement system, photoluminescence set-ups (T = 2 … 300 K), laser characterization tools, cathodoluminescence facility, selective oxidation set-up, ion implantation set-up (100 kV) with ECR source, three source evaporation chamber (thermal and electron-beam evaporation, HF magnetron sputtering), high temperature furnace, Mössbauer spectrometer (TMS, CEMS), scanning electron microscope (SEM), atomic force microscope (AFM), in-situ scanning electron microscope irradiation facility at GSI Darmstadt


Target groups

Research and development laboratories for optoelectronics, photonics and nanotechnology